a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv cbo i c = 10 ma 55 v bv cer i c = 20 ma r be = 10 ? 55 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 28 v 5.0 ma h fe v ce = 5.0 v i c = 1.0 a 15 150 --- p in p g c v cc = 28 v p in = 5.0 w f = 1215 to 1400 mhz 26 7.2 45 36 8.5 49 w db % npn silicon rf power transistor AM81214-030 description: the asi AM81214-030 is designed for 1215 ? 1400 mhz, l-band radar applications. features: ? internal input/output matching network ? p g = 7.2 db at 5.0 w(peak)/1400 mhz ? omnigold ? metalization system maximum ratings i c 2.75 a v cc 32 v p diss 63 w @ t c = 25 c t j -65 c to +250 c t stg -65 c to +200 c jc 2.4 c/w package style .250 2l flg common base
|
